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| PNP SILICON PLANAR SWITCHING TRANSISTOR ISSUE 2 SEPTEMBER 94 FEATURES * 60 Volt VCEO * Fast switching FXT2907A B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -60 -60 -5 -600 500 -55 to +175 UNIT V V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cut-Off Current Collector Cut-Off Current Base Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICEX ICBO IB VCE(sat) VBE(sat) hFE 75 100 100 100 50 200 MIN. -60 -60 -5 -50 -10 -10 -50 -0.4 -1.6 -1.3 -2.6 TYP. MAX. V V V nA nA nA V V V V UNIT CONDITIONS. IC=-10A, IE=0 IC=-10mA, IB=0* IE=-10A, IC=0 VCE=-30V, VBE=-0.5V VCB=-50V, IE=0 VCB=-50V, IE=0, Tamb=150C VCE=-30V, VBE=-0.5V IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* IC=-150mA, IB=-15mA* IC=-500mA, IB=-50mA* IC=-0.1mA, VCE=-10V IC=-1mA, VCE=-10V IC=-10mA, VCE=-10V IC=-150mA, VCE=-10V* IC=-500mA, VCE=-10V* MHz IC=-50mA, VCE=-20V f=100MHz A 300 Transition Frequency fT *Measured under pulsed conditions. Pulse width=300ms. Duty cycle 2% PAGE NO FXT2907A SWITCHING CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Output Capacitance Input Capacitance Turn On Time SYMBOL Cobo Cibo ton MIN. TYP. 8 30 50 MAX. UNIT CONDITIONS. pF pF ns VCB=-10V, IE=0, f=100KHz VBE=2V, IC=0, f=100KHz VCE=-30V IC=-150mA, IB1=15mA (See Turn On Circuit) VCC=-6V, IC=-150mA IB1= IB2=-15mA (See Turn Off Circuit) Turn Off Time toff 110 ns TURN ON TIME TEST CIRCUIT -30V 200 0 -16V 50 1K Scope: Rise Time < 5 ns Pulse width <200ns TURN OFF TIME TEST CIRCUIT 15V -6V 1K 37 0 -30V 1K Scope: Rise Time < 5 ns 50 Pulse width <200ns |
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